IKP15N60TXKSA1, БТИЗ транзистор, универсальный, 30 А, 2.05 В, 130 Вт, 600 В, TO-220, 3 вывод(-ов)
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см. техническую документацию
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от 630 руб. × 4 платежа
Описание
The IKP15N60T is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
• Lowest Vce (sat) drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
• Very soft, fast recovery anti-parallel emitter controlled HE diode
• High ruggedness, temperature stable behaviour
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Highest efficiency - Low conduction and switching losses
• High device reliability
• 5µs Short-circuit withstand time
• Green product
• Halogen-free
Технические параметры
Collector Emitter Saturation Voltage | 2.05В |
Collector Emitter Voltage Max | 600В |
Continuous Collector Current | 30А |
Power Dissipation | 130Вт |
Количество Выводов | 3вывод(-ов) |
Максимальная Рабочая Температура | 175°C |
Монтаж транзистора | Through Hole |
Стиль Корпуса Транзистора | TO-220 |
Channel Type | N |
Energy Rating | 0.81mJ |
Gate Capacitance | 860pF |
Maximum Collector Emitter Voltage | 600 V |
Maximum Continuous Collector Current | 26 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 130 W |
Minimum Operating Temperature | -40 °C |
Mounting Type | Through Hole |
Package Type | TO-220 |
Pin Count | 3 |
Transistor Configuration | Single |
Вес, г | 0.5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов