ISO2H823V25XUMA1, Power Load Distribution Switch, High Side, Active High, 8 Output, 3.6 V, 1 A, 0.21 ohm, VQFN-EP-70

ISO2H823V25XUMA1, Power Load Distribution Switch, High Side, Active High, 8 Output, 3.6 V, 1 A, 0.21 ohm, VQFN-EP-70
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см. техническую документацию
2 870 руб.
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от 25 шт.2 450 руб.
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Номенклатурный номер: 8010000146
Артикул: ISO2H823V25XUMA1

Описание

Полупроводники - Микросхемы\Микросхемы Управления Питанием\Коммутаторы Питания
EiceDRIVER™ Gate Driver ICs Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That"s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

Технические параметры

Brand: Infineon Technologies
Factory Pack Quantity: 2500
Fall Time: 30 us
Manufacturer: Infineon
Maximum Operating Temperature: +85 C
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Number of Drivers: 8 Driver
Number of Outputs: 8 Output
Output Current: 1.2 A
Package/Case: QFN-70
Packaging: Reel, Cut Tape
Part # Aliases: ISO2H823V2.5 SP001225470
Product Category: Gate Drivers
Product Type: Gate Drivers
Product: Isolated Gate Drivers
Rise Time: 30 us
Subcategory: PMIC-Power Management ICs
Supply Voltage - Max: 3.6 V
Supply Voltage - Min: 2.75 V
Technology: Si
Type: High-Side
Вес, г 6.3

Техническая документация

Datasheet
pdf, 2185 КБ
Datasheet
pdf, 2185 КБ

Дополнительная информация

Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем