KIT-CRD-3DD12P, Evaluation Board, 6th Generation Schottky Diodes PFC Reference Design, 650V

The purpose of buck-boost evaluation kit is to demonstrate the high speed switching performance of Cree's 3rd generation (C3M) silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET). This evaluation kit supports the new TO-247-4L package. The TO-247-4L package comes with an added Kelvin source pin that reduces the effects of L*di/dt in the gate circuit. The reduced L*di/dt in the gate circuit allows more voltage to be applied at the gate and source which results in faster dynamic switching. Buck boost evaluation board evaluates and optimizes steady state and high speed switching performance of Wolfspeed C3M™ SiC MOSFETs and schottky diodes. It analyse the evaluation board in versatile power conversion topologies, such as synchronous / asynchronous buck or boost converter, half bridge and full bridge.

• Board features footprints for both 3 and 4 lead TO-247 packages of C3M™ SiC MOSFETs
• Compatible with both TO-247 and TO-220 packages of SiC schottky diodes
• Does not require additional capacitor to run evaluation board in buck or boost converter topologies
• Two dedicated gate drivers available on the board for each C3M™ SiC MOSFET
• Includes (2) 1200V, 75mohm C3M™ SiC MOSFETs in a TO-247-4 package with the testing hardware
• Dimension is 222mm X 97mm X 49mm
• Maximum input voltage is 800V and maximum output voltage is 800V
• Maximum output power is 2500W, VCC (logic power) is 15VDC