MSC010SDA120K

Фото 1/2 MSC010SDA120K
Изображения служат только для ознакомления,
см. техническую документацию
1 070 руб.
Мин. кол-во для заказа 3 шт.
от 25 шт.950 руб.
3 шт. на сумму 3 210 руб.
Плати частями
от 804 руб. × 4 платежа
Номенклатурный номер: 8012541495

Описание

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Технические параметры

Diode Technology Schottky Barrier
Diode Type SiC Schottky
Maximum Continuous Forward Current 10A
Mounting Type Through Hole
Package Type TO-220
Peak Reverse Repetitive Voltage 1200V
Rectifier Type Schottky Diode
Series MSC0
Brand: Microchip Technology
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 1
If - Forward Current: 27 A
Ifsm - Forward Surge Current: 75 A
Ir - Reverse Current: 3 uA
Manufacturer: Microchip
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Pd - Power Dissipation: 136 W
Product Category: Schottky Diodes & Rectifiers
Product Type: Schottky Diodes & Rectifiers
Product: Schottky Silicon Carbide Diodes
Series: MSC0
Subcategory: Diodes & Rectifiers
Technology: SiC
Vf - Forward Voltage: 1.5 V
Vr - Reverse Voltage: 1.2 kV
Vrrm - Repetitive Reverse Voltage: 1.2 kV
Вес, г 1

Техническая документация

Дополнительная информация

Калькуляторы группы «Диоды выпрямительные»
Типы корпусов импортных диодов