MT46H16M32LFBQ-5 AAT:C, DRAM, Mobile LPDDR, 512 Мбит, 16M x 32bit, 200 МГц, VFBGA, 90 вывод(-ов)
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см. техническую документацию
от 930 руб. × 4 платежа
Описание
MT46H16M32LFBQ-5 AAT: C is a LPDDR SDRAM. It is a 512Mb mobile low-power DDR SDRAM and a high-speed CMOS, dynamic random access memory containing 536.870.912 bits. It is internally configured as a quad-bank DRAM. Each of the x16's 134.217.728-bit banks are organized as 8192 rows by 1024 columns by 16 bits. Each of the x32's 134.217.728-bit banks are organized as 8192 rows by 512 columns by 32 bits.
• Operating voltage range is 1.8V, deep power-down (DPD)
• 16Meg x 32 configuration, automotive certified
• Packaging style is 90-ball (8mm x 13mm) VFBGA, "green"
• Timing (cycle time) is 5ns at CL = 3 (200 MHz), JEDEC-standard addressing
• Automotive temperature range is -40˚C to +105˚C, third generation
• Clock rate is 200MHz, bidirectional data strobe per byte of data (DQS)
• Differential clock inputs (CK and CK#), commands entered on each positive CK edge
• DQS edge-aligned with data for READs, centeraligned with data for WRITEs
• Concurrent auto precharge option is supported, auto refresh and self refresh modes
• Temperature-compensated self refresh (TCSR), partial-array self refresh (PASR)
Технические параметры
IC Case / Package | VFBGA |
Memory Configuration | 16M x 32bit |
Количество Выводов | 90вывод(-ов) |
Линейка Продукции | PW Series |
Максимальная Рабочая Температура | 105°C |
Максимальная Тактовая Частота | 200МГц |
Минимальная Рабочая Температура | -40°C |
Монтаж Микросхемы | SMD(Поверхностный Монтаж) |
Номинальное Напряжение Питания | 1.8В |
Плотность Памяти | 512Мбит |
Тип DRAM | Mobile LPDDR |
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем