MT46V64M8P-5B:J
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 640 руб.
Мин. кол-во для заказа 2 шт.
от 10 шт. —
1 460 руб.
от 25 шт. —
1 440 руб.
2 шт.
на сумму 3 280 руб.
Плати частями
от 820 руб. × 4 платежа
от 820 руб. × 4 платежа
Описание
DDR SDRAM
Micron DDR SDRAM allows applications to transfer data on the rising and falling edges of a clock signal. These features double bandwidth and improve performance over SDR SDRAM. To achieve this functionality, Micron uses a 2n-prefetch architecture where the internal data bus is double the size of the external data bus so data capture can happen two times each clock cycle.
Micron DDR SDRAM allows applications to transfer data on the rising and falling edges of a clock signal. These features double bandwidth and improve performance over SDR SDRAM. To achieve this functionality, Micron uses a 2n-prefetch architecture where the internal data bus is double the size of the external data bus so data capture can happen two times each clock cycle.
Технические параметры
| Access Time: | 700 ps |
| Brand: | Micron |
| Data Bus Width: | 8 bit |
| Factory Pack Quantity: Factory Pack Quantity: | 1080 |
| Manufacturer: | Micron Technology |
| Maximum Clock Frequency: | 200 MHz |
| Maximum Operating Temperature: | +70 C |
| Memory Size: | 512 Mbit |
| Minimum Operating Temperature: | 0 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Organization: | 64 M x 8 |
| Package / Case: | TSOP-66 |
| Packaging: | Tray |
| Product Category: | DRAM |
| Product Type: | DRAM |
| Series: | MT46V |
| Subcategory: | Memory & Data Storage |
| Supply Current - Max: | 85 mA |
| Supply Voltage - Max: | 2.7 V |
| Supply Voltage - Min: | 2.5 V |
| Type: | SDRAM-DDR |
Техническая документация
Datasheet
pdf, 1697 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем
