MT53E1G32D2FW-046 IT:B, DRAM, LPDDR4, 32 Gbit, 1G x 32bit, 2.133GHz, TFBGA, 200 Pins
см. техническую документацию
от 2 210 руб. × 4 платежа
Описание
MT53E1G32D2 is a 32Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.
• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), programmable VSS (ODT) termination
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
• Selectable output drive strength (DS), clock-stop capability, single-ended CK and DQS support
• 1.10V VDD2 / 0.60V VDDQ or 1.10V VDDQ operating voltage
• 1 Gig x 32 configuration, LPDDR4, 2 die addressing
• 200-ball TFBGA (Ø0.40 SMD) package, 468ps cycle time
• Operating temperature rating range from -40°C to +95°C
Технические параметры
| IC Case / Package | TFBGA |
| Memory Configuration | 1G x 32bit |
| Количество Выводов | 200вывод(-ов) |
| Линейка Продукции | PW Series |
| Максимальная Рабочая Температура | 95°C |
| Максимальная Тактовая Частота | 2.133ГГц |
| Минимальная Рабочая Температура | -40°C |
| Монтаж Микросхемы | SMD(Поверхностный Монтаж) |
| Номинальное Напряжение Питания | 1.1В |
| Плотность Памяти | 32Гбит |
| Тип DRAM | Mobile LPDDR4 |
| Уровень Чувствительности к Влажности (MSL) | MSL 3-168 часов |
| Brand: | Micron |
| Factory Pack Quantity: Factory Pack Quantity: | 1360 |
| Manufacturer: | Micron Technology |
| Memory Size: | 32 Gbit |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Organization: | 1 G x 32 |
| Package / Case: | FBGA |
| Product Category: | DRAM |
| Product Type: | DRAM |
| Subcategory: | Memory & Data Storage |
| Automotive | Unknown |
| Chip Density (bit) | 32G |
| DRAM Type | Mobile LPDDR4 SDRAM |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Interface Type | LVSTL |
| Maximum Access Time (ns) | 3.5 |
| Maximum Clock Rate (MHz) | 4266 |
| Maximum Operating Supply Voltage (V) | 1.17|1.95 |
| Maximum Operating Temperature (°C) | 95 |
| Minimum Operating Supply Voltage (V) | 1.06|1.7 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Number of Bits/Word (bit) | 32 |
| Number of I/O Lines (bit) | 32 |
| Number of Internal Banks | 16 |
| Number of Words per Bank | 64M |
| Operating Current (mA) | 400 |
| Organization | 1Gx32 |
| Packaging | Tray |
| Part Status | Preliminary |
| PCB changed | 200 |
| Pin Count | 200 |
| PPAP | Unknown |
| Process Technology | CMOS |
| Standard Package Name | BGA |
| Supplier Package | TFBGA |
| Вес, г | 0.91 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем
