MT53E256M32D2FW-046 AAT:B, DRAM, 256M X 32BIT, -40 TO 105DEG C

MT53E256M32D2FW-046 AAT: B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16's 536.870.912-bit banks are organized as 32.768 rows by 1024 columns by 16bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.

• Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
• 256Meg x 32 configuration, LPDDR4, 2die addressing, B design
• Packaging style is 200-ball TFBGA 10 x 14.5 x 1.1mm (Ø0.40 SMD)
• Cycle time is 468ps at RL = 36/40, partial-array self refresh (PASR)
• Operating temperature range is -40°C to +105°C, automotive qualified
• Clock rate is 2133MHz, data rate per pin is 4266Mb/s
• Ultra-low-voltage core and I/O power supplies
• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)