R6004ENJTL, Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) LPTS T/R
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1800 шт., срок 5-7 недель
160 руб.
Мин. кол-во для заказа 200 шт.
200 шт.
на сумму 32 000 руб.
Плати частями
от 8 000 руб. × 4 платежа
от 8 000 руб. × 4 платежа
Альтернативные предложения1
Описание
Super Junction-MOS EN & KN Series MOSFETs
ROHM Semiconductor Super Junction-MOS EN and KN Series MOSFETs combine the low-noise characteristics of planar MOSFETs and the low ON-resistance characteristics of Super Junction MOSFETs. The EN Series is offered in 600V and 650V versions, and is recommended for power supply circuits requiring noise countermeasures. The fast switching KN Series is offered in 600V, 650V, and 800V variants, and is recommended for power supply circuits demanding lower loss and greater efficiency.
ROHM Semiconductor Super Junction-MOS EN and KN Series MOSFETs combine the low-noise characteristics of planar MOSFETs and the low ON-resistance characteristics of Super Junction MOSFETs. The EN Series is offered in 600V and 650V versions, and is recommended for power supply circuits requiring noise countermeasures. The fast switching KN Series is offered in 600V, 650V, and 800V variants, and is recommended for power supply circuits demanding lower loss and greater efficiency.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 40 ns |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Part # Aliases: | R6004ENJ |
| Pd - Power Dissipation: | 58 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Rds On - Drain-Source Resistance: | 900 mOhms |
| Rise Time: | 22 ns |
| Series: | Super Junction-MOS EN |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 55 ns |
| Typical Turn-On Delay Time: | 22 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 1 |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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