R6007JND3TL1, Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R
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см. техническую документацию
см. техническую документацию
2500 шт., срок 5-7 недель
210 руб.
Мин. кол-во для заказа 150 шт.
150 шт.
на сумму 31 500 руб.
Плати частями
от 7 875 руб. × 4 платежа
от 7 875 руб. × 4 платежа
Альтернативные предложения1
Описание
R60xx PrestoMOS™ High-Voltage MOSFETs
ROHM Semiconductor R60xx PrestoMOS™ High-Voltage MOSFETs incorporate fast recovery diodes to optimize board space while providing 600V in five package types. These third-generation metal-oxide semiconductor field-effect transistors are ideal for power supplies with integrated inverters. The devices' high-speed switching combined with an internal diode with high Reverse Recovery Time (t rr ) characteristics optimize efficiency and lower loss while contributing to smaller designs.
ROHM Semiconductor R60xx PrestoMOS™ High-Voltage MOSFETs incorporate fast recovery diodes to optimize board space while providing 600V in five package types. These third-generation metal-oxide semiconductor field-effect transistors are ideal for power supplies with integrated inverters. The devices' high-speed switching combined with an internal diode with high Reverse Recovery Time (t rr ) characteristics optimize efficiency and lower loss while contributing to smaller designs.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 25 ns |
| Id - Continuous Drain Current: | 7 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | R6007JND3 |
| Pd - Power Dissipation: | 96 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 17.5 nC |
| Rds On - Drain-Source Resistance: | 780 mOhms |
| Rise Time: | 15 ns |
| Series: | BM14270MUV-LB |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PrestoMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 32 ns |
| Typical Turn-On Delay Time: | 17 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Вес, г | 1 |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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