IXFK100N65X2, Транзистор N-MOSFET, 650В, 100А, 1040Вт, TO264, 200нс
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Описание
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency.
Технические параметры
| Case | TO264 |
| Drain current | 100A |
| Drain-source voltage | 650V |
| Features of semiconductor devices | ultra junction x-class |
| Gate charge | 183nC |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | THT |
| On-state resistance | 30mΩ |
| Polarisation | unipolar |
| Power dissipation | 1.04kW |
| Reverse recovery time | 200ns |
| Type of transistor | N-MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.4V |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 30 mΩ |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.04 kW |
| Minimum Gate Threshold Voltage | 2.7V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-264P |
| Pin Count | 3 |
| Series | HiperFET, X2-Class |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 183 nC @ 10 V |
| Width | 26.3mm |
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 40 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-264-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.04 kW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 180 nC |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Rise Time: | 24 ns |
| Series: | 650V Ultra Junction X2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 83 ns |
| Typical Turn-On Delay Time: | 59 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Вес, г | 9.61 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IXFK100N65X2
pdf, 159 КБ
Datasheet IXFX100N65X2
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Диодно-тиристорные модули Crydom
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