CSD19535KCS, Транзистор N-MOSFET, полевой, 100В, 150А, 300Вт, TO220-3, NexFET™
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Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 5 ns |
| Forward Transconductance - Min | 274 S |
| Height | 16.51 mm |
| Id - Continuous Drain Current | 50 A |
| Length | 10.67 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 300 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 78 nC |
| Rds On - Drain-Source Resistance | 3.6 mOhms |
| Rise Time | 15 ns |
| RoHS | Details |
| Series | CSD19535KCS |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Unit Weight | 0.211644 oz |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V |
| Width | 4.7 mm |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 274 S |
| Id - Continuous Drain Current: | 187 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 78 nC |
| Rds On - Drain-Source Resistance: | 3.6 mOhms |
| Rise Time: | 15 ns |
| Series: | CSD19535KCS |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 60 ns |
| Typical Turn-On Delay Time: | 32 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Вес, г | 1.973 |
Техническая документация
Документация
pdf, 845 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
