CSD22204W
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см. техническую документацию
см. техническую документацию
250 руб.
от 2 шт. —
190 руб.
от 10 шт. —
145 руб.
1 шт.
на сумму 250 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
MOSFET -8V, P channel NexFET power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection 9-DSBGA
Технические параметры
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 250 |
| Fall Time | 2.29 us |
| Forward Transconductance - Min | 18 S |
| Height | 0.62 mm |
| Id - Continuous Drain Current | -5 A |
| Length | 1.5 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | DSBGA-9 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 1.7 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 18.9 nC |
| Rds On - Drain-Source Resistance | 14 mOhms |
| Rise Time | 600 ns |
| RoHS | Details |
| Series | CSD22204W |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 3.45 us |
| Typical Turn-On Delay Time | 58 ns |
| Vds - Drain-Source Breakdown Voltage | -8 V |
| Vgs - Gate-Source Voltage | -6 V |
| Vgs th - Gate-Source Threshold Voltage | -450 mV |
| Width | 1.5 mm |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 5 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DSBGA-9 |
| Pd - Power Dissipation: | 1.7 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 24.6 nC |
| Rds On - Drain-Source Resistance: | 14 mOhms |
| Series: | CSD22204W |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 8 V |
| Vgs - Gate-Source Voltage: | -6 V, +6 V |
| Vgs th - Gate-Source Threshold Voltage: | 950 mV |
Техническая документация
Документация
pdf, 465 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
