ECH8693R-TL-W
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см. техническую документацию
см. техническую документацию
190 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
140 руб.
от 7 шт. —
119 руб.
2 шт.
на сумму 380 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, DUAL N-CH, 24V, 14A, SOT-28FL; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:24V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
Технические параметры
| Brand | ON Semiconductor |
| Configuration | Dual Common Drain |
| Factory Pack Quantity | 3000 |
| Fall Time | 22200 ns |
| Forward Transconductance - Min | 8 S |
| Id - Continuous Drain Current | 14 A |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | ECH-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 1.4 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 13 nC |
| Rds On - Drain-Source Resistance | 7 mOhms |
| Rise Time | 525 ns |
| RoHS | Details |
| Series | ECH8693R |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 18650 ns |
| Typical Turn-On Delay Time | 545 ns |
| Vds - Drain-Source Breakdown Voltage | 24 V |
| Vgs - Gate-Source Voltage | 12.5 V |
| Brand: | onsemi |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 22200 ns |
| Forward Transconductance - Min: | 8 S |
| Id - Continuous Drain Current: | 14 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | ECH-8 |
| Pd - Power Dissipation: | 1.4 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 13 nC |
| Rds On - Drain-Source Resistance: | 7 mOhms |
| Rise Time: | 525 ns |
| Series: | ECH8693R |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 18650 ns |
| Typical Turn-On Delay Time: | 545 ns |
| Vds - Drain-Source Breakdown Voltage: | 24 V |
| Vgs - Gate-Source Voltage: | -12.5 V, +12.5 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
Техническая документация
Datasheet
pdf, 356 КБ
Datasheet ECH8693R-TL-W
pdf, 300 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
