S29GL512T10TFI010
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Описание
Электроэлемент
Описание IC: FLASH memory; CFI,parallel; TSOP56; parallel Характеристики | Категория | Микросхема |
| Тип | памяти |
| Вид | FLASH |
Технические параметры
| Programmable | Yes |
| Architecture | Sectored |
| Automotive | No |
| Block Organization | Symmetrical |
| Boot Block | Yes |
| Cell Type | NOR |
| Chip Density (bit) | 512M |
| Command Compatible | Yes |
| ECC Support | Yes |
| ECCN (US) | 3A991b.1.a. |
| EU RoHS | Compliant |
| Interface Type | Parallel |
| Lead Shape | Gull-wing |
| Location of Boot Block | Bottom|Top |
| Max. Access Time (ns) | 100 |
| Maximum Erase Time (s) | 3.5/Sector |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Maximum Operating Temperature (°C) | 85 |
| Maximum Page Access Time (ns) | 15 |
| Maximum Programming Time (ms) | 0.75/Word |
| Minimum Endurance (Cycles) | 100000 |
| Minimum Operating Supply Voltage (V) | 2.7 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Number of Bits/Word (bit) | 8/16 |
| Number of Words | 64M/32M |
| OE Access Time (ns) | 35 |
| Operating Current (mA) | 60 |
| Packaging | Tray |
| Page Read Current (mA) | 25 |
| Page Size | 32byte |
| Part Status | Active |
| PCB changed | 56 |
| Pin Count | 56 |
| PPAP | No |
| Process Technology | 45nm, MirrorBit |
| Program Current (mA) | 100 |
| Programmability | Yes |
| Programming Voltage (V) | 2.7 to 3.6 |
| Sector Size | 128Kbyte x 512 |
| Standard Package Name | SOP |
| Supplier Package | TSOP |
| Supplier Temperature Grade | Industrial |
| Support of Page Mode | Yes |
| Timing Type | Asynchronous |
| Typical Operating Supply Voltage (V) | 3.3|3 |
| Вес, г | 15.67 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем
