FDD86367
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см. техническую документацию
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610 руб.
от 2 шт. —
500 руб.
от 5 шт. —
430 руб.
от 9 шт. —
401.94 руб.
1 шт.
на сумму 610 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
N-Channel PowerTrench MOSFET 80V 100A 4.2mOhm 3-Pin DPAK T/R - Tape and Reel (Alt: FDD86367)
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 100A(Tc) |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4840pF @ 40V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 227W(Tj) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 80A, 10V |
| Series | Automotive, AEC-Q101, PowerTrenchВ® |
| Supplier Device Package | D-PAK(TO-252) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 16 ns |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3 |
| Pd - Power Dissipation: | 227 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 88 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 3.3 mOhms |
| Rise Time: | 49 ns |
| Series: | FDD86367 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 36 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 403 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
