FDP038AN06A0
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см. техническую документацию
см. техническую документацию
950 руб.
от 2 шт. —
820 руб.
от 5 шт. —
741 руб.
от 10 шт. —
696.25 руб.
1 шт.
на сумму 950 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:310W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Id Max:80A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 60 ns |
| Height | 16.3 mm |
| Id - Continuous Drain Current | 80 A |
| Length | 10.67 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part # Aliases | FDP038AN06A0_NL |
| Pd - Power Dissipation | 310 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 3.8 mOhms |
| Rise Time | 144 ns |
| RoHS | Details |
| Series | FDP038AN06A0 |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 34 ns |
| Typical Turn-On Delay Time | 17 ns |
| Unit Weight | 0.063493 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 4.7 mm |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 17 |
| Maximum Drain Source Resistance (mOhm) | 3.8@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 310000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | TMOS |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| Tab | Tab |
| Typical Fall Time (ns) | 60 |
| Typical Gate Charge @ 10V (nC) | 96 |
| Typical Gate Charge @ Vgs (nC) | 96@10V |
| Typical Input Capacitance @ Vds (pF) | 6400@25V |
| Typical Rise Time (ns) | 144 |
| Typical Turn-Off Delay Time (ns) | 34 |
| Typical Turn-On Delay Time (ns) | 17 |
| Вес, г | 2.041 |
Техническая документация
Datasheet
pdf, 660 КБ
Документация
pdf, 720 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
