FDG6332C
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240 руб.
от 2 шт. —
160 руб.
от 3 шт. —
121 руб.
1 шт.
на сумму 240 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N & P CH, 20V, 700MA, SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C
Технические параметры
Current - Continuous Drain (Id) @ 25В°C | 700mA, 600mA |
Drain to Source Voltage (Vdss) | 20V |
FET Feature | Logic Level Gate |
FET Type | N and P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V |
Manufacturer | ON Semiconductor |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power - Max | 300mW |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 700mA, 4.5V |
Series | Automotive, AEC-Q101, PowerTrenchВ® |
Supplier Device Package | SC-88(SC-70-6) |
Vgs(th) (Max) @ Id | 1.5V @ 250ВµA |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 7 ns, 14 ns |
Forward Transconductance - Min: | 2.8 S, 1.8 S |
Id - Continuous Drain Current: | 700 mA |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | SOT-323-6 |
Part # Aliases: | FDG6332C_NL |
Pd - Power Dissipation: | 300 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signals |
Qg - Gate Charge: | 1.5 nC, 2 nC |
Rds On - Drain-Source Resistance: | 300 mOhms |
Rise Time: | 7 ns, 14 ns |
Series: | FDG6332C |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel, P-Channel |
Transistor Type: | 1 N-Channel, 1 P-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 9 ns, 6 ns |
Typical Turn-On Delay Time: | 5 ns, 5.5 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 600 mV, 1.5 V |
Channel Mode | Enhancement |
Channel Type | N, P |
Maximum Continuous Drain Current | 600 mA, 700 mA |
Maximum Drain Source Resistance | 442 mΩ, 700 mΩ |
Maximum Drain Source Voltage | 20 V |
Maximum Gate Source Voltage | -12 V, +12 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 300 mW |
Minimum Gate Threshold Voltage | 0.3V |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 2 |
Package Type | SOT-363 |
Pin Count | 6 |
Transistor Configuration | Isolated |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V |
Width | 1.25mm |
Вес, г | 0.07 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов