FDS4465
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см. техническую документацию
см. техническую документацию
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800 руб.
от 2 шт. —
720 руб.
1 шт.
на сумму 800 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, P CH, -20V, -13.5A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C
Технические параметры
Brand | ON Semiconductor/Fairchild |
Channel Mode | Enhancement |
Configuration | Single Quad Drain Triple Source |
Factory Pack Quantity | 2500 |
Fall Time | 140 ns |
Forward Transconductance - Min | 70 S |
Height | 1.75 mm |
Id - Continuous Drain Current | -13.5 A |
Length | 4.9 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SO-8 |
Packaging | Reel |
Part # Aliases | FDS4465_NL |
Pd - Power Dissipation | 2.5 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 8.5 mOhms |
Rise Time | 24 ns |
RoHS | Details |
Series | FDS4465 |
Technology | Si |
Tradename | PowerTrench |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 300 ns |
Typical Turn-On Delay Time | 20 ns |
Unit Weight | 0.004586 oz |
Vds - Drain-Source Breakdown Voltage | -20 V |
Vgs - Gate-Source Voltage | 8 V |
Width | 3.9 mm |
Channel Type | P |
Maximum Continuous Drain Current | 13.5 A |
Maximum Drain Source Resistance | 9 mΩ |
Maximum Drain Source Voltage | 20 V |
Maximum Gate Source Voltage | -8 V, +8 V |
Maximum Power Dissipation | 2.5 W |
Minimum Gate Threshold Voltage | 0.4V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOIC |
Pin Count | 8 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 86 nC @ 4.5 V |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов