FDS4465

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800 руб.
от 2 шт.720 руб.
1 шт. на сумму 800 руб.
Плати частями
от 0 руб. × 4 платежа
Номенклатурный номер: 8002983438

Описание

Электроэлемент
MOSFET, P CH, -20V, -13.5A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C

Технические параметры

Brand ON Semiconductor/Fairchild
Channel Mode Enhancement
Configuration Single Quad Drain Triple Source
Factory Pack Quantity 2500
Fall Time 140 ns
Forward Transconductance - Min 70 S
Height 1.75 mm
Id - Continuous Drain Current -13.5 A
Length 4.9 mm
Manufacturer ON Semiconductor
Maximum Operating Temperature +175 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Number of Channels 1 Channel
Package / Case SO-8
Packaging Reel
Part # Aliases FDS4465_NL
Pd - Power Dissipation 2.5 W
Product Category MOSFET
Rds On - Drain-Source Resistance 8.5 mOhms
Rise Time 24 ns
RoHS Details
Series FDS4465
Technology Si
Tradename PowerTrench
Transistor Polarity P-Channel
Transistor Type 1 P-Channel
Type MOSFET
Typical Turn-Off Delay Time 300 ns
Typical Turn-On Delay Time 20 ns
Unit Weight 0.004586 oz
Vds - Drain-Source Breakdown Voltage -20 V
Vgs - Gate-Source Voltage 8 V
Width 3.9 mm
Channel Type P
Maximum Continuous Drain Current 13.5 A
Maximum Drain Source Resistance 9 mΩ
Maximum Drain Source Voltage 20 V
Maximum Gate Source Voltage -8 V, +8 V
Maximum Power Dissipation 2.5 W
Minimum Gate Threshold Voltage 0.4V
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOIC
Pin Count 8
Transistor Configuration Single
Transistor Material Si
Typical Gate Charge @ Vgs 86 nC @ 4.5 V

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 137 КБ
Документация
pdf, 264 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов