FDS4559
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см. техническую документацию
см. техническую документацию
360 руб.
от 2 шт. —
310 руб.
от 10 шт. —
252 руб.
1 шт.
на сумму 360 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Альтернативные предложения1
Описание
Электроэлемент
MOSFET, NP-CH, 60V, 8-SOIC, RL; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | N-Channel, P-Channel |
| Factory Pack Quantity | 2500 |
| Fall Time | 6 ns, 12 ns |
| Forward Transconductance - Min | 14 S, 9 S |
| Height | 1.75 mm |
| Id - Continuous Drain Current | 4.5 A |
| Length | 4.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SO-8 |
| Packaging | Reel |
| Part # Aliases | FDS4559_NL |
| Pd - Power Dissipation | 2 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 55 mOhms |
| Rise Time | 8 ns, 10 ns |
| RoHS | Details |
| Series | FDS4559 |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 19 ns, 19 ns |
| Typical Turn-On Delay Time | 11 ns, 7 ns |
| Unit Weight | 0.006596 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 3.9 mm |
| Channel Type | N, P |
| Maximum Continuous Drain Current | 3.5 A, 4.5 A |
| Maximum Drain Source Resistance | 55 mΩ, 105 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Power Dissipation | 2 W |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 12.5 nC @ 10 V, 15 nC @ 10 V |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 4.5@N Channel|3.5@P Channel |
| Maximum Drain Source Resistance (mOhm) | 55@10V@N Channel|105@10V@P Channel |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 8 |
| PPAP | No |
| Process Technology | TMOS |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| Typical Fall Time (ns) | 6@N Channel|12@P Channel |
| Typical Gate Charge @ 10V (nC) | 12.5@N Channel|15@P Channel |
| Typical Gate Charge @ Vgs (nC) | 12.5@10V@N Channel|15@10V@P Channel |
| Typical Input Capacitance @ Vds (pF) | 650@25V@N Channel|759@25V@P Channel |
| Typical Rise Time (ns) | 8@N Channel|10@P Channel |
| Typical Turn-Off Delay Time (ns) | 19@N Channel|19@P Channel |
| Typical Turn-On Delay Time (ns) | 11@N Channel|7@P Channel |
| Вес, г | 0.15 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 146 КБ
Datasheet
pdf, 265 КБ
FDS4559
pdf, 147 КБ
FDS4559
pdf, 288 КБ
Документация
pdf, 306 КБ
FDS4559_D
pdf, 327 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
