FDS5670

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560 руб.

от 2 шт. — 520 руб.

от 5 шт. — 444 руб.

от 10 шт. — 411.25 руб.

1 шт. на сумму 560 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8002983441

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 60В, 10А, 2,5Вт, SO8 Характеристики

Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single Quad Drain Triple Source
Factory Pack Quantity	2500
Fall Time	23 ns
Forward Transconductance - Min	39 S
Height	1.75 mm
Id - Continuous Drain Current	10 A
Length	4.9 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SO-8
Packaging	Reel
Part # Aliases	FDS5670_NL
Pd - Power Dissipation	2.5 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	14 mOhms
Rise Time	10 ns
RoHS	Details
Series	FDS5670
Technology	Si
Tradename	PowerTrench
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	16 ns
Unit Weight	0.004586 oz
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	20 V
Width	3.9 mm
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Resistance	14 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Power Dissipation	2.5 W
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	49 nC @ 10 V
Вес, г	0.216