FDS6375
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см. техническую документацию
см. техническую документацию
460 руб.
от 2 шт. —
360 руб.
от 5 шт. —
288 руб.
от 10 шт. —
263.34 руб.
1 шт.
на сумму 460 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
Описание Транзистор P-MOSFET, полевой, -20В, -8А, 2,5Вт, SO8, PowerTrench® Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Maximum Continuous Drain Current | 8 A |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | ±8 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 175 °C |
| RDS-on | 24@4.5V mOhm |
| Typical Fall Time | 57 ns |
| Typical Rise Time | 9 ns |
| Typical Turn-Off Delay Time | 124 ns |
| Typical Turn-On Delay Time | 12 ns |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 57 ns |
| Forward Transconductance - Min: | 35 S |
| Id - Continuous Drain Current: | 8 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOIC-8 |
| Part # Aliases: | FDS6375_NL |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 36 nC |
| Rds On - Drain-Source Resistance: | 24 mOhms |
| Rise Time: | 9 ns |
| Series: | FDS6375 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 124 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Maximum Drain Source Resistance | 24 mΩ |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 2.5 W |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOIC |
| Pin Count | 8 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 26 nC @ 4.5 V |
| Width | 4mm |
| Вес, г | 0.228 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
