FDMC510P

Изображения служат только для ознакомления,
см. техническую документацию

430 руб.

от 2 шт. — 330 руб.

1 шт. на сумму 430 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8002984051

Электроэлемент

Описание Транзистор P-MOSFET, полевой, -20В, -18А, 41Вт, MLP8, PowerTrench®

Current - Continuous Drain (Id) @ 25В°C	12A(Ta), 18A(Tc)
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	116nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	7860pF @ 10V
Manufacturer	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	8-PowerWDFN
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	2.3W(Ta), 41W(Tc)
Rds On (Max) @ Id, Vgs	8mOhm @ 12A, 4.5V
Series	PowerTrenchВ®
Supplier Device Package	8-MLP(3.3x3.3)
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±8V
Vgs(th) (Max) @ Id	1V @ 250ВµA
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	18 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	Power-33-8
Pd - Power Dissipation:	41 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	116 nC
Rds On - Drain-Source Resistance:	8 mOhms
Series:	FDMC510P
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.066