FDMS7602S
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470 руб.
от 2 шт. —
390 руб.
от 10 шт. —
336 руб.
1 шт.
на сумму 470 руб.
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Описание
Электроэлемент
DUAL N CHANNEL MOSFET, POWERTRENCH, 30V,; DUAL N CHANNEL MOSFET, POWERTRENCH, 30V, 30A, POWER56, FULL REEL; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 12A, 17A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel(Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 15V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 8-PowerWDFN |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 1W |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 12A, 10V |
| Series | PowerTrenchВ® |
| Supplier Device Package | Power56 |
| Vgs(th) (Max) @ Id | 3V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 2.3 ns, 3.2 ns |
| Forward Transconductance - Min: | 63 S, 87 S |
| Id - Continuous Drain Current: | 30 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | Power-56-8 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 20 nC, 33 nC |
| Rds On - Drain-Source Resistance: | 7.5 mOhms, 5 mOhms |
| Rise Time: | 2.5 ns, 3.8 ns |
| Series: | FDMS7602S |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench SyncFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 20 ns, 27 ns |
| Typical Turn-On Delay Time: | 8.6 ns, 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Вес, г | 0.197 |
Техническая документация
Datasheet
pdf, 482 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
