FDMS86322
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см. техническую документацию
см. техническую документацию
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700 руб.
от 2 шт. —
590 руб.
от 5 шт. —
532 руб.
от 10 шт. —
503.75 руб.
1 шт.
на сумму 700 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
13 A, 80 V, 0.00765 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA
Технические параметры
Current - Continuous Drain (Id) @ 25В°C | 13A(Ta), 60A(Tc) |
Drain to Source Voltage (Vdss) | 80V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 50V |
Manufacturer | ON Semiconductor |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | 8-PowerTDFN |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power Dissipation (Max) | 2.5W(Ta), 104W(Tc) |
Rds On (Max) @ Id, Vgs | 7.65 mOhm @ 13A, 10V |
Series | PowerTrenchВ® |
Supplier Device Package | 8-PQFN(5x6) |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 3000 |
Fall Time: | 13 ns |
Forward Transconductance - Min: | 45 S |
Id - Continuous Drain Current: | 13 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | Power-56-8 |
Pd - Power Dissipation: | 104 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 55 nC |
Rds On - Drain-Source Resistance: | 7.65 mOhms |
Rise Time: | 20 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 83 A |
Maximum Drain Source Resistance | 14 mΩ |
Maximum Drain Source Voltage | 80 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 104 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 1 |
Package Type | PQFN8 |
Pin Count | 8 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 39 nC @ 10 V |
Width | 6mm |
Вес, г | 0.09 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов