FDMS2734
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см. техническую документацию
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2 120 руб.
от 2 шт. —
1 950 руб.
1 шт.
на сумму 2 120 руб.
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от 530 руб. × 4 платежа
от 530 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2.5W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Pulse Current Idm:16A; SMD Marking:FDMS2734; Termination Type:Surface Mount Device; Voltage Vds Typ:250V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 2.8(A) |
| Drain-Source On-Volt | 250(V) |
| Gate-Source Voltage (Max) | ±20(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | Power 56 EP |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Polarity | N |
| Power Dissipation | 2.5(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 11 S |
| Id - Continuous Drain Current: | 2.8 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | Power-56-8 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 42 nC |
| Rds On - Drain-Source Resistance: | 122 mOhms |
| Rise Time: | 10 ns |
| Series: | FDMS2734 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | UltraFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 36 ns |
| Typical Turn-On Delay Time: | 22 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 3 |
Техническая документация
Datasheet
pdf, 427 КБ
Документация
pdf, 428 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
