FDP3682
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см. техническую документацию
см. техническую документацию
550 руб.
от 2 шт. —
440 руб.
от 5 шт. —
365 руб.
от 10 шт. —
336.42 руб.
1 шт.
на сумму 550 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
Описание Транзистор: N-MOSFET; 100В; 23А; 95Вт; TO220 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 6A |
| Maximum Drain Source Resistance | 0.036? |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Minimum Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Pin Count | 3 |
| Product Height | 9.02mm |
| Product Length | 10.28mm |
| Product Width | 4.57mm |
| Supplier Package | TO-220AB |
| Typical Fall Time | 32ns |
| Typical Rise Time | 46ns |
| Typical Turn-Off Delay Time | 26ns |
| Typical Turn-On Delay Time | 9ns |
| конфигурация | Single |
| максимальная рабочая температура | 175°C |
| монтаж (установка) | Through Hole |
| разрешение | Power MOSFET |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 32 ns |
| Id - Continuous Drain Current: | 32 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | FDP3682_NL |
| Pd - Power Dissipation: | 95 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 28 nC |
| Rds On - Drain-Source Resistance: | 36 mOhms |
| Rise Time: | 46 ns |
| Series: | FDP3682 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 26 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 95 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Through Hole |
| Package Type | TO-220AB |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 18.5 nC @ 10 V |
| Width | 4.83mm |
| Вес, г | 2.8 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
