FQD1N80TM

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140 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 87 руб.

от 10 шт. — 75 руб.

от 100 шт. — 62.88 руб.

2 шт. на сумму 280 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8002988206

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 800В, 0,63А, 45Вт, DPAK Характеристики

Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	2500
Fall Time	25 ns
Forward Transconductance - Min	0.75 S
Height	2.39 mm
Id - Continuous Drain Current	1 A
Length	6.73 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Packaging	Reel
Part # Aliases	FQD1N80TM_NL
Pd - Power Dissipation	2.5 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	20 Ohms
Rise Time	25 ns
RoHS	Details
Series	FQD1N80
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	10 ns
Unit Weight	0.009184 oz
Vds - Drain-Source Breakdown Voltage	800 V
Vgs - Gate-Source Voltage	30 V
Width	6.22 mm
Channel Type	N
Maximum Continuous Drain Current	1 A
Maximum Drain Source Resistance	20 Ω
Maximum Drain Source Voltage	800 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	3V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	5.5 nC @ 10 V
Вес, г	0.66