FDS89161LZ
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480 руб.
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Описание
Электроэлемент
MOSFET, N-CH, 100V, 2.7A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V;
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 2.7A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | 2 N-Channel(Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 5.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 302pF @ 50V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 8-SOIC(0.154", 3.90mm Width) |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 1.6W |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2.7A, 10V |
| Series | PowerTrenchВ® |
| Supplier Device Package | 8-SOIC |
| Vgs(th) (Max) @ Id | 2.2V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 7.8 s |
| Id - Continuous Drain Current: | 2.7 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 31 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 5.3 nC |
| Rds On - Drain-Source Resistance: | 105 mOhms |
| Rise Time: | 10 ns |
| Series: | FDS89161LZ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.7 V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | 100V |
| Type | N Channel |
| Вес, г | 0.4 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
