ECH8667-TL-H

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см. техническую документацию

370 руб.

от 2 шт. — 280 руб.

от 5 шт. — 221 руб.

от 10 шт. — 204.12 руб.

Добавить в корзину 1 шт. на сумму 370 руб.

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Номенклатурный номер: 8002989149

Электроэлемент

Transistor MOSFET Array Dual P-CH 30V 5.5A 8-Pin ECH T/R - Tape and Reel (Alt: ECH8667-TL-H)

Brand	ON Semiconductor
Configuration	Dual
Factory Pack Quantity	3000
Fall Time	42 ns
Id - Continuous Drain Current	-5.5 A
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	ECH-8
Packaging	Reel
Pd - Power Dissipation	1.5 W
Product Category	MOSFET
Qg - Gate Charge	13 nC
Rds On - Drain-Source Resistance	58 mOhms
Rise Time	23 ns
RoHS	Details
Series	ECH8667
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	2 P-Channel
Typical Turn-Off Delay Time	63 ns
Typical Turn-On Delay Time	7.2 ns
Vds - Drain-Source Breakdown Voltage	-30 V
Vgs - Gate-Source Voltage	20 V
Brand:	onsemi
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity:	3000
Fall Time:	42 ns
Id - Continuous Drain Current:	5.5 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	ECH-8
Pd - Power Dissipation:	1.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	13 nC
Rds On - Drain-Source Resistance:	58 mOhms
Rise Time:	23 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	2 P-Channel
Typical Turn-Off Delay Time:	63 ns
Typical Turn-On Delay Time:	7.2 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V