FDMS8320L
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см. техническую документацию
см. техническую документацию
1 320 руб.
от 2 шт. —
1 200 руб.
от 5 шт. —
1 110 руб.
1 шт.
на сумму 1 320 руб.
Плати частями
от 330 руб. × 4 платежа
от 330 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N-CH, 40V, 248A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:248A; Drain Source Voltage Vds:40V; On Resistance Rds(on):800Вµohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V;
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 36A(Ta), 100A(Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 11110pF @ 20V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 2.5W(Ta), 104W(Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 32A, 10V |
| Series | PowerTrenchВ® |
| Supplier Device Package | 8-PQFN(5x6) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 36 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | Power-56-8 |
| Pd - Power Dissipation: | 104 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 170 nC |
| Rds On - Drain-Source Resistance: | 1.1 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A, 238 A |
| Maximum Drain Source Resistance | 1.7 mΩ |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 104 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | PQFN8 |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 121 nC @ 10 V |
| Width | 6mm |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
