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FDS4685

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см. техническую документацию

290 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 230 руб.

от 10 шт. — 201 руб.

от 27 шт. — 181.25 руб.

2 шт. на сумму 580 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8002989830

Бренд: ON Semiconductor***

Описание

Электроэлемент

MOSFET, P CH, -40V, -8.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C

Технические параметры

Channel Mode	Enhancement
Channel Type	P
Lead Finish	Matte Tin
Max Processing Temp	260
Maximum Continuous Drain Current	8.2 A
Maximum Drain Source Voltage	40 V
Maximum Gate Source Voltage	±20 V
Mounting	Surface Mount
Operating Temperature	-55 to 150 °C
RDS-on	27@10V mOhm
Typical Fall Time	18 ns
Typical Rise Time	11 ns
Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	14 ns
Maximum Drain Source Resistance	27 mΩ
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	19 nC @ 5 V
Width	4mm
Automotive	No
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	8.2
Maximum Drain Source Resistance (mOhm)	27@10V
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2500
Minimum Operating Temperature (°C)	-55
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
PPAP	No
Process Technology	TMOS
Product Category	Power MOSFET
Standard Package Name	SO
Supplier Package	SOIC
Typical Fall Time (ns)	18
Typical Gate Charge @ Vgs (nC)	19@5V
Typical Input Capacitance @ Vds (pF)	1872@20V
Typical Rise Time (ns)	11
Typical Turn-Off Delay Time (ns)	50
Typical Turn-On Delay Time (ns)	14
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	18 ns
Forward Transconductance - Min:	22 S
Id - Continuous Drain Current:	8.2 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOIC-8
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	27 nC
Rds On - Drain-Source Resistance:	22 mOhms
Rise Time:	11 ns
Series:	FDS4685
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	14 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Case	SO8
Drain current	-8.2A
Drain-source voltage	-40V
Gate charge	27nC
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	ONSEMI
On-state resistance	42mΩ
Polarisation	unipolar
Power dissipation	2.5W
Technology	PowerTrench®
Type of transistor	P-MOSFET