FCD600N60Z
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см. техническую документацию
см. техническую документацию
610 руб.
от 2 шт. —
500 руб.
от 5 шт. —
425 руб.
от 10 шт. —
392.50 руб.
1 шт.
на сумму 610 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N-CH, 600V, 7.4A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.51ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V;
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 8 ns |
| Forward Transconductance - Min | 6.7 S |
| Height | 2.39 mm |
| Id - Continuous Drain Current | 7.4 A |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 89 W |
| Product | MOSFET |
| Product Category | MOSFET |
| Qg - Gate Charge | 20 nC |
| Rds On - Drain-Source Resistance | 600 mOhms |
| Rise Time | 7 ns |
| RoHS | Details |
| Series | FCD600N60Z |
| Technology | Si |
| Tradename | SuperFET II |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 39 ns |
| Typical Turn-On Delay Time | 13 ns |
| Unit Weight | 0.009184 oz |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Width | 6.22 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 6.7 S |
| Id - Continuous Drain Current: | 7.4 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3 |
| Pd - Power Dissipation: | 89 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET |
| Qg - Gate Charge: | 20 nC |
| Rds On - Drain-Source Resistance: | 600 mOhms |
| Rise Time: | 7 ns |
| Series: | FCD600N60Z |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperFET II |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 39 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 0.4 |
Техническая документация
Datasheet
pdf, 715 КБ
Datasheet FCD600N60Z
pdf, 716 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
