FDMA410NZT
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см. техническую документацию
см. техническую документацию
230 руб.
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от 5 шт. —
170 руб.
от 10 шт. —
147 руб.
от 28 шт. —
131.04 руб.
2 шт.
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Описание
Электроэлемент
Ultra Thin N-Channel PowerTrench MOSFET 20V Drain to Source Voltage 9.5A Continuous Drain Current 2.4W Power Dissipation Surface Mount 6-Pin UDFN T/R - Tape and Reel (Alt: FDMA410NZT)
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 9.5A(Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 10V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 6-UDFN Exposed Pad |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 2.4W(Ta) |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 9.5A, 4.5V |
| Series | - |
| Supplier Device Package | 6-MicroFET(2x2) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±8V |
| Vgs(th) (Max) @ Id | 1V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 3.3 ns |
| Forward Transconductance - Min: | 36 S |
| Id - Continuous Drain Current: | 9.5 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | UMLP-6 |
| Pd - Power Dissipation: | 2.4 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10 nC |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Rise Time: | 3 ns |
| Series: | FDMA410NZT |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 8.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
Техническая документация
Datasheet
pdf, 478 КБ
Документация
pdf, 489 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
