FCD380N60E
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см. техническую документацию
см. техническую документацию
760 руб.
от 2 шт. —
640 руб.
от 5 шт. —
569 руб.
от 10 шт. —
531.25 руб.
1 шт.
на сумму 760 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5
Технические параметры
| Base Part Number | FCD380N60 |
| Current - Continuous Drain (Id) @ 25В°C | 10.2A(Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770pF @ 25V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 106W(Tc) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 5A, 10V |
| Series | SuperFETВ® II |
| Supplier Device Package | D-Pak |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 10 S |
| Id - Continuous Drain Current: | 10.2 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3 |
| Pd - Power Dissipation: | 106 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET |
| Qg - Gate Charge: | 34 nC |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Rise Time: | 9 ns |
| Series: | FCD380N60E |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperFET II |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 64 ns |
| Typical Turn-On Delay Time: | 17 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 0.4 |
Техническая документация
Datasheet
pdf, 705 КБ
Datasheet FCD380N60E
pdf, 707 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
