IR2112PBF, Driver 600V 0.5A 2-OUT High and Low Side Non-Inv 14-Pin PDIP Tube

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430 руб.

Мин. кол-во для заказа 82 шт.

от 225 шт. — 410 руб.

от 799 шт. — 388 руб.

Добавить в корзину 82 шт. на сумму 35 260 руб.

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Альтернативные предложения1

Номенклатурный номер: 8003191895

Артикул: IR2112PBF

Semiconductor - IC > Power Management > Gate and Power Driver

Описание IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Характеристики

Base Product Number	IR2112 ->
Channel Type	Independent
Current - Peak Output (Source, Sink)	250mA, 500mA
Driven Configuration	High-Side or Low-Side
ECCN	EAR99
Gate Type	IGBT, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600V
HTSUS	8542.39.0001
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	6V, 9.5V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature	-40В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	14-DIP (0.300"", 7.62mm)
REACH Status	REACH Unaffected
Rise / Fall Time (Typ)	80ns, 40ns
RoHS Status	ROHS3 Compliant
Supplier Device Package	14-DIP
Voltage - Supply	10V ~ 20V
Brand	Infineon Technologies
Configuration	Non-Inverting
Factory Pack Quantity	1500
Fall Time	65 ns
Features	Independent
Height	5.33 mm(Max)
Length	20.19 mm(Max)
Logic Type	CMOS, LSTTL
Manufacturer	Infineon
Maximum Operating Temperature	+125 C
Maximum Turn-Off Delay Time	105 ns
Maximum Turn-On Delay Time	125 ns
Minimum Operating Temperature	-40 C
Mounting Style	Through Hole
Number of Outputs	2
Operating Supply Current	180 uA
Operating Supply Voltage	10 V to 20 V
Output Current	200 mA
Packaging	Tube
Pd - Power Dissipation	1600 mW
Product	Half-Bridge Drivers
Product Category	Gate Drivers
Propagation Delay - Max	180 ns
Rise Time	130 ns
RoHS	Details
Supply Voltage - Max	20 V
Supply Voltage - Min	10 V
Type	Half-Bridge Driver
Unit Weight	0.057144 oz
Width	7.11 mm(Max)