IGW75N65H5XKSA1, Trans IGBT Chip N-CH 650V 120A 395W 3-Pin(3+Tab) TO-247 Tube
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850 руб.
Мин. кол-во для заказа 42 шт.
от 123 шт. —
820 руб.
42 шт.
на сумму 35 700 руб.
Плати частями
от 8 925 руб. × 4 платежа
от 8 925 руб. × 4 платежа
Описание
Semiconductor - Discrete > Power Discrete > Transistor - IGBT Component
IGBT Trench 650V 120A 395W Through Hole PG-TO247-3
Технические параметры
| Base Product Number | IGW75N65 -> |
| Current - Collector (Ic) (Max) | 120A |
| Current - Collector Pulsed (Icm) | 300A |
| ECCN | EAR99 |
| Gate Charge | 160nC |
| HTSUS | 8541.29.0095 |
| IGBT Type | Trench |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power - Max | 395W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | TrenchStopв„ў -> |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy | 2.25mJ (on), 950ВµJ (off) |
| Td (on/off) @ 25В°C | 28ns/174ns |
| Test Condition | 400V, 75A, 8Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 75 A |
| Maximum Gate Emitter Voltage | 20V |
| Maximum Power Dissipation | 395 W |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.65 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 120 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IGW75N65H5 SP001257936 |
| Pd - Power Dissipation: | 395 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | Trenchstop IGBT5 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Вес, г | 7.5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
