FDB0105N407L, MOSFETs 40V N-Channel Power Trench MOSFET
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Описание
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N-Channel PowerTrench® MOSFETs onsemi N-Channel PowerTrench MOSFETs are produced using onsemi's advanced PowerTrench process that has been specially tailored to minimize on-state resistance and yet maintain superior switching performance. onsemi N-Channel PowerTrench MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 800 |
| Fall Time: | 61 ns |
| Forward Transconductance - Min: | 286 S |
| Id - Continuous Drain Current: | 460 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-263-7 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 208 nC |
| Rds On - Drain-Source Resistance: | 1.8 mOhms |
| Rise Time: | 69 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 117 ns |
| Typical Turn-On Delay Time: | 45 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Current - Continuous Drain (Id) @ 25В°C | 460A(Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 291nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 23100pF @ 20V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-263-7, DВІPak(6 Leads+Tab) |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 3.8W(Ta), 300W(Tc) |
| Rds On (Max) @ Id, Vgs | 0.8mOhm @ 50A, 10V |
| Series | PowerTrenchВ® |
| Supplier Device Package | TO-263-7 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Вес, г | 2 |
Техническая документация
Документация
pdf, 362 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
