IKW50N60H3, IKW50N60 - DISCRETE IGBT WITH AN
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см. техническую документацию
см. техническую документацию
700 руб.
Кратность заказа 5 шт.
от 50 шт. —
490 руб.
от 150 шт. —
437 руб.
от 500 шт. —
413.12 руб.
5 шт.
на сумму 3 500 руб.
Плати частями
от 875 руб. × 4 платежа
от 875 руб. × 4 платежа
Описание
TO-247AC-3 IGBTs ROHS
Технические параметры
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 2.25 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 100 A |
| Continuous Collector Current Ic Max | 50 A |
| Factory Pack Quantity | 240 |
| Gate-Emitter Leakage Current | 100 nA |
| Height | 20.7 mm |
| Length | 15.87 mm |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part # Aliases | IKW50N60H3FKSA1 IKW50N60H3XK SP000852244 |
| Pd - Power Dissipation | 333 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | IKW50N60 |
| Technology | Si |
| Unit Weight | 1.340411 oz |
| Width | 5.31 mm |
| Collector Current (Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Diode Reverse Recovery Time (Trr) | 130ns |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V, 50A |
| Input Capacitance (Cies@Vce) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 333W |
| Pulsed Collector Current (Icm) | 200A |
| Total Gate Charge (Qg@Ic,Vge) | 315nC |
| Turn?off Delay Time (Td(off)) | 235ns |
| Turn?off Switching Loss (Eoff) | 2.36mJ |
| Turn?on Delay Time (Td(on)) | 23ns |
| Turn?on Switching Loss (Eon) | 2.36mJ |
| Type | FS(Field Stop) |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 100 A |
| Continuous Collector Current Ic Max: | 50 A |
| Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | SP000852244 IKW5N6H3XK IKW50N60H3FKSA1 |
| Pd - Power Dissipation: | 333 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 2112 КБ
Datasheet IKW50N60H3FKSA1
pdf, 2179 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
