RGS80TSX2DHRC11, 555W 80A 1.2kV FS(Field Stop) TO-247-3 IGBTs ROHS

360 шт., срок 6-8 недель

1 150 руб.

Кратность заказа 5 шт.

от 50 шт. — 770 руб.

от 150 шт. — 664 руб.

5 шт. на сумму 5 750 руб.

Плати частями
от 1 439 руб. × 4 платежа

Альтернативные предложения2

Номенклатурный номер: 8003827845

Артикул: RGS80TSX2DHRC11

Бренд: Rohm

555W 80A 1.2kV FS(Field Stop) TO-247-3 IGBTs ROHS

Collector Current (Ic)	80A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Diode Reverse Recovery Time (Trr)	198ns
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V, 40A
Input Capacitance (Cies@Vce)	-
Operating Temperature	-40℃~+175℃@(Tj)
Power Dissipation (Pd)	555W
Pulsed Collector Current (Icm)	120A
Total Gate Charge (Qg@Ic,Vge)	104nC
Turn?off Delay Time (Td(off))	199ns
Turn?off Switching Loss (Eoff)	3.1mJ
Turn?on Delay Time (Td(on))	49ns
Turn?on Switching Loss (Eon)	3mJ
Type	FS(Field Stop)
Brand:	ROHM Semiconductor
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.7 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Factory Pack Quantity:	450
Gate-Emitter Leakage Current:	500 nA
Manufacturer:	ROHM Semiconductor
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package/Case:	TO-247N-3
Packaging:	Tube
Part # Aliases:	RGS80TSX2DHR
Pd - Power Dissipation:	555 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Qualification:	AEC-Q101
Subcategory:	IGBTs
Technology:	Si
Вес, г	1