FDP2710
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см. техническую документацию
см. техническую документацию
1 590 руб.
от 2 шт. —
1 460 руб.
от 4 шт. —
1 360 руб.
1 шт.
на сумму 1 590 руб.
Плати частями
от 399 руб. × 4 платежа
от 399 руб. × 4 платежа
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 250В, 31,3А, 260Вт, TO220-3 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 154 ns |
| Height | 16.3 mm |
| Id - Continuous Drain Current | 50 A |
| Length | 10.67 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 260 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 42 mOhms |
| Rise Time | 252 ns |
| RoHS | Details |
| Series | FDP2710 |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 112 ns |
| Typical Turn-On Delay Time | 80 ns |
| Unit Weight | 0.063493 oz |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4.7 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 154 ns |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 260 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 101 nC |
| Rds On - Drain-Source Resistance: | 42 mOhms |
| Rise Time: | 252 ns |
| Series: | FDP2710 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 112 ns |
| Typical Turn-On Delay Time: | 80 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 1228 КБ
Документация
pdf, 1232 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
