FDS6898AZ
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см. техническую документацию
см. техническую документацию
410 руб.
от 2 шт. —
310 руб.
от 5 шт. —
248 руб.
от 10 шт. —
229.32 руб.
1 шт.
на сумму 410 руб.
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Описание
Электроэлемент
MOSFET, NN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds, N Channel:20V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.01ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 9.4A |
| Drain to Source Voltage (Vdss) | 20V |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel(Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1821pF @ 10V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 8-SOIC(0.154", 3.90mm Width) |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 900mW |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9.4A, 4.5V |
| Series | PowerTrenchВ® |
| Supplier Device Package | 8-SOIC |
| Vgs(th) (Max) @ Id | 1.5V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 16 ns |
| Forward Transconductance - Min: | 47 S |
| Id - Continuous Drain Current: | 9.4 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Part # Aliases: | FDS6898AZ_NL |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 23 nC |
| Rds On - Drain-Source Resistance: | 14 mOhms |
| Rise Time: | 15 ns |
| Series: | FDS6898AZ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 34 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 190 КБ
Документация
pdf, 191 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
