FDS9958
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см. техническую документацию
см. техническую документацию
410 руб.
от 2 шт. —
310 руб.
от 5 шт. —
246 руб.
1 шт.
на сумму 410 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, DUAL P-CH, -60V, -2.9A, SOIC-8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.082ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Volta
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Dual Dual Drain |
| Factory Pack Quantity | 2500 |
| Fall Time | 6 ns |
| Height | 1.75 mm |
| Id - Continuous Drain Current | -2.9 A |
| Length | 4.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SO-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 2 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 105 mOhms |
| Rise Time | 3 ns |
| RoHS | Details |
| Series | FDS9958 |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | P-Channel |
| Transistor Type | 2 P-Channel |
| Typical Turn-Off Delay Time | 27 ns |
| Typical Turn-On Delay Time | 6 ns |
| Unit Weight | 0.006596 oz |
| Vds - Drain-Source Breakdown Voltage | -60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 3.9 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 6 ns |
| Id - Continuous Drain Current: | 2.9 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SOIC-8 |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 23 nC |
| Rds On - Drain-Source Resistance: | 105 mOhms |
| Rise Time: | 3 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 2 P-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.2 |
Техническая документация
Datasheet
pdf, 334 КБ
Документация
pdf, 336 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
