FDS5672
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см. техническую документацию
см. техническую документацию
830 руб.
от 2 шт. —
710 руб.
от 4 шт. —
646 руб.
1 шт.
на сумму 830 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N CH, 60V, 12A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150В°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55В°C
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 14 ns |
| Height | 1.75 mm |
| Id - Continuous Drain Current | 12 A |
| Length | 4.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SO-8 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 8.8 mOhms |
| Rise Time | 20 ns |
| RoHS | Details |
| Series | FDS5672 |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 35 ns |
| Typical Turn-On Delay Time | 13 ns |
| Unit Weight | 0.004586 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 3.9 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Resistance | 10 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Power Dissipation | 2.5 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 12 |
| Maximum Diode Forward Voltage (V) | 1.25 |
| Maximum Drain Source Resistance (mOhm) | 10@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 85 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | -55 to 150 |
| Part Status | Active |
| PCB changed | 8 |
| PPAP | No |
| Process Technology | PowerTrench |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| Typical Fall Time (ns) | 14 |
| Typical Gate Charge @ 10V (nC) | 34 |
| Typical Gate Charge @ Vgs (nC) | 34@10V |
| Typical Gate Plateau Voltage (V) | 4.7 |
| Typical Gate to Drain Charge (nC) | 9.3 |
| Typical Gate to Source Charge (nC) | 9.4 |
| Typical Input Capacitance @ Vds (pF) | 2200@25V |
| Typical Output Capacitance (pF) | 410 |
| Typical Reverse Recovery Charge (nC) | 40(Max) |
| Typical Reverse Recovery Time (ns) | 39(Max) |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 130@25V |
| Typical Rise Time (ns) | 20 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Typical Turn-On Delay Time (ns) | 13 |
| Continuous Drain Current (Id) | 12A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@12A, 10V |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 2.2nF@25V |
| Power Dissipation (Pd) | 2.5W |
| Total Gate Charge (Qg@Vgs) | 45nC@10V |
| Вес, г | 5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
