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AUIRFR2905Z

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600 руб.

от 2 шт. — 490 руб.

от 5 шт. — 429 руб.

от 126 шт. — 410.82 руб.

1 шт. на сумму 600 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8004156110

Бренд: INFINEON TECHNOLOGIES AG.

Описание

Электроэлемент

MOSFET,N CH,55V,42A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:110W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V

Технические параметры

Current - Continuous Drain (Id) @ 25В°C	42A(Tc)
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1380pF @ 25V
Manufacturer	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-252-3, DPak(2 Leads+Tab), SC-63
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	110W(Tc)
Rds On (Max) @ Id, Vgs	14.5 mOhm @ 36A, 10V
Series	HEXFETВ®
Standard Package	3
Supplier Device Package	D-Pak
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Continuous Drain Current (Id)	42A
Drain Source On Resistance (RDS(on)@Vgs,Id)	14.5mΩ@36A, 10V
Drain Source Voltage (Vdss)	55V
Gate Threshold Voltage (Vgs(th)@Id)	4V@250uA
Input Capacitance (Ciss@Vds)	1.38nF@25V
Power Dissipation (Pd)	110W
Total Gate Charge (Qg@Vgs)	44nC@10V
Type	1PCSNChannel
Вес, г	0.33