FDB075N15A
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см. техническую документацию
см. техническую документацию
1 410 руб.
от 2 шт. —
1 290 руб.
от 5 шт. —
1 190 руб.
от 8 шт. —
1 138.75 руб.
1 шт.
на сумму 1 410 руб.
Плати частями
от 354 руб. × 4 платежа
от 354 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.00625ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 130(A) |
| Drain-Source On-Volt | 150(V) |
| Gate-Source Voltage (Max) | '±20(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 175C |
| Operating Temperature Classification | Military |
| Package Type | D2PAK |
| Packaging | Tape and Reel |
| Pin Count | 2+Tab |
| Polarity | N |
| Power Dissipation | 333(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Channel Type | N |
| Maximum Continuous Drain Current | 130 A |
| Maximum Drain Source Resistance | 7.5 mΩ |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 333 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 77 nC @ 10 V |
| Width | 9.65mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 21 ns |
| Forward Transconductance - Min: | 164 S |
| Id - Continuous Drain Current: | 130 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3 |
| Pd - Power Dissipation: | 333 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 77 nC |
| Rds On - Drain-Source Resistance: | 6.25 mOhms |
| Rise Time: | 37 ns |
| Series: | FDB075N15A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Continuous Drain Current (Id) | 130A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 7.5mΩ@10V, 100A |
| Drain Source Voltage (Vdss) | 150V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 7.35nF@75V |
| Power Dissipation (Pd) | 333W |
| Total Gate Charge (Qg@Vgs) | 100nC@10V |
Техническая документация
Datasheet
pdf, 605 КБ
Datasheet FDP075N15A, FDB075N15A
pdf, 1704 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
