FDMS86180
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см. техническую документацию
см. техническую документацию
1 440 руб.
от 2 шт. —
1 320 руб.
от 3 шт. —
1 250 руб.
1 шт.
на сумму 1 440 руб.
Плати частями
от 360 руб. × 4 платежа
от 360 руб. × 4 платежа
Описание
Электроэлемент
MOSFET, N-CH, 100V, 151A, POWER 56; Transistor Polarity:N Channel; Continuous Drain Current Id:151A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:138W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 21(A) |
| Drain-Source On-Volt | 100(V) |
| Gate-Source Voltage (Max) | '±20(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | PQFN EP |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Polarity | N |
| Power Dissipation | 2.7(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 144 S |
| Id - Continuous Drain Current: | 151 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | Power-56-8 |
| Pd - Power Dissipation: | 138 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 84 nC |
| Rds On - Drain-Source Resistance: | 2.4 mOhms |
| Rise Time: | 12 ns |
| Series: | FDMS86180 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 30 ns |
| Typical Turn-On Delay Time: | 24 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
Техническая документация
Datasheet
pdf, 328 КБ
Документация
pdf, 329 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
