UJ4C075018K3S, MOSFET 750V/18mOhms, SICFET,G4,TO247-3
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
UJ4C/SC 750V Gen 4 SiC FETsUnitedSiC UJ4C/SC 750V Gen 4 SiC FETs are a high-performance series delivering industry-best performance Figures of Merit that lower conduction losses and increase efficiency at higher speed, all while improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can significantly enhance system performance without the need to change gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the UnitedSiC UJ4C/SC FETs.
Технические параметры
| Brand: | UnitedSiC |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Id - Continuous Drain Current: | 81 A |
| Manufacturer: | UnitedSiC |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 385 W |
| Product Category: | JFET |
| Product Type: | JFETs |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 23 mOhms |
| Series: | UJ4C |
| Subcategory: | Transistors |
| Technology: | SiC |
| Tradename: | SiC FET |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 750 V |
| Вес, г | 6 |
Техническая документация
Datasheet UJ4C075018K3S
pdf, 484 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые с управляющим PN-переходом (JFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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