TPS1100D, MOSFET MOSFET 10ns RT

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Номенклатурный номер: 8004608279

Артикул: TPS1100D

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

15V 1.6A 180mOhm@10V,1.5A 791mW 1.5V@250uA P Channel SOIC-8 MOSFETs

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	75
Fall Time:	10 ns
Forward Transconductance - Min:	2.5 S
Id - Continuous Drain Current:	1.6 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-40 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOIC-8
Packaging:	Tube
Pd - Power Dissipation:	791 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Qg - Gate Charge:	5.45 nC
Rds On - Drain-Source Resistance:	180 mOhms
Rise Time:	10 ns
Series:	TPS1100
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	4.5 ns
Vds - Drain-Source Breakdown Voltage:	15 V
Vgs - Gate-Source Voltage:	-15 V, +2 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Category	Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25° C	1.6A
Drain to Source Voltage (Vdss)	15V
Family	MOSFETs-Single
FET Feature	Standard
FET Polarity	P-Channel
Gate Charge (Qg) @ Vgs	5.45nC @ 10V
Mounting Type	Surface Mount
Other Names	TPS1100DR
Package / Case	8-SOIC(3.9mm Width)
Packaging	Tape & Reel(TR)
Power - Max	791mW
Rds On (Max) @ Id, Vgs	180 mOhm @ 1.5A, 10V
Series	*
Standard Package	2.5
Вес, г	0.07