IKW30N65EL5XKSA1, IGBT Transistors 650V IGBT Trenchstop 5
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz.
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.05 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 85 A |
Factory Pack Quantity: Factory Pack Quantity: | 240 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | -20 V, +20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247-3 |
Packaging: | Tube |
Part # Aliases: | IKW30N65EL5 SP001178080 |
Pd - Power Dissipation: | 227 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | Trenchstop IGBT5 L5 |
Subcategory: | IGBTs |
Technology: | Si |
Tradename: | TRENCHSTOP |
Current - Collector (Ic) (Max) | 85A |
Current - Collector Pulsed (Icm) | 120A |
Gate Charge | 168nC |
IGBT Type | - |
Input Type | Standard |
Manufacturer | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -40В°C ~ 175В°C(TJ) |
Package / Case | TO-247-3 |
Packaging | Tube |
Part Status | Active |
Power - Max | 227W |
Reverse Recovery Time (trr) | 100ns |
Series | TrenchStopв(ў 5 |
Supplier Device Package | PG-TO247-3 |
Switching Energy | 470ВµJ(on), 1.35mJ(off) |
Td (on/off) @ 25В°C | 33ns/308ns |
Test Condition | 400V, 30A, 10 Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 30A |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Channel Type | N |
Configuration | Single |
Maximum Collector Emitter Voltage | 650 V |
Maximum Continuous Collector Current | 85 A |
Maximum Gate Emitter Voltage | 30V |
Maximum Power Dissipation | 227 W |
Number of Transistors | 1 |
Package Type | PG-TO247 |
Pin Count | 3 |
Вес, г | 38 |
Техническая документация
Datasheet IKW30N65EL5XKSA1
pdf, 1836 КБ
Datasheet IKW30N65EL5XKSA1
pdf, 1926 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов